MM3734系列是(shi)用于(yu)鋰離子(zi)/鋰聚合(he)物電(dian)(dian)(dian)池2次(ci)保(bao)護的電(dian)(dian)(dian)壓監測IC,高耐(nai)壓CMOS制造工藝,可對鋰離子(zi)/鋰聚合(he)物電(dian)(dian)(dian)池的每串電(dian)(dian)(dian)池的過充電(dian)(dian)(dian)進行檢(jian)測。 內部(bu)由電(dian)(dian)(dian)壓檢(jian)測器、基準電(dian)(dian)(dian)壓源、振蕩器、計(ji)數器電(dian)(dian)(dian)路(lu)和邏輯電(dian)(dian)(dian)路(lu)構成。
單串(chuan) 二(er)次保(bao)護(hu)用(yong)
(1)高精度的(de)電壓檢測(ce)
● 檢測電壓(ya)4.0 V ~ 4.5 V,5 mV 進階可選 精度±20 mV
● 滯(zhi)后電壓(ya)0 V ~ 1.0 V,50 mV 進階可選
但"檢測(ce)電壓-滯后電壓<4.0V" 不可
(2)檢測延時時間的選擇范圍
● 檢測(ce)延時(shi)時(shi)間 0.25s、1.02s、2.048s、4.096s可選
(3)低電流消耗
● 普通工作模式(shi)下 Typ. 1.5μA, Max. 3.0μA
● 待機(ji)模(mo)式下(xia) Max. 0.8μA
型號 | 封裝 | 過充電 檢測電壓 [V] | 過充電 解除電壓 [V] | 過充電 檢測延時時間 [s] | 過充電 解除延時時間 [ms] |
---|---|---|---|---|---|
MM3734A01YRE | SON-6C | 4.5 | 4.15 | 2.048 | 16 |
MM3734A03YRE | SON-6C | 4.55 | 4.2 | 2.048 | 16 |