MM3625系列是采用(yong)高耐(nai)壓CMOS制(zhi)造工(gong)藝的可充電(dian)(dian)(dian)(dian)(dian)鋰(li)離(li)子(zi)/鋰(li)聚合物電(dian)(dian)(dian)(dian)(dian)池(chi)IC，能夠對鋰(li)離(li)子(zi)/鋰(li)聚合物電(dian)(dian)(dian)(dian)(dian)池(chi)的3、4串電(dian)(dian)(dian)(dian)(dian)池(chi)中的每串電(dian)(dian)(dian)(dian)(dian)池(chi)進(jin)行高精(jing)度的過充電(dian)(dian)(dian)(dian)(dian)檢(jian)測。 它還有一個(ge)內置(zhi)的調節器(qi)，可以檢(jian)測到電(dian)(dian)(dian)(dian)(dian)池(chi)過度放電(dian)(dian)(dian)(dian)(dian)并關閉調節器(qi)。 內部由電(dian)(dian)(dian)(dian)(dian)壓檢(jian)測器(qi)、基(ji)準電(dian)(dian)(dian)(dian)(dian)壓源、延時設(she)置(zhi)電(dian)(dian)(dian)(dian)(dian)路、邏輯電(dian)(dian)(dian)(dian)(dian)路和(he)調節器(qi)電(dian)(dian)(dian)(dian)(dian)路構成。

3 ~ 4串 二(er)次保護(hu)用

（1）各(ge)種檢測/解除電壓的選(xuan)擇(ze)范圍(wei)與精度

● 過充電(dian)檢測(ce)電(dian)壓 3.6V ~ 4.5V，5mV 進階(jie)可選 精度±25mV（Ta=±0℃ ~ +50℃）

● 過(guo)充電(dian)解除電(dian)壓 3.4V ~ 4.5V，50mV 進階(jie)可選 精度為±50mV

● VOUT OFF電(dian)壓 2.1V ~ 3.2V，50mV 進階可選 精度±50mV

（2）檢測/解(jie)除延時(shi)時(shi)間的選擇范圍

● 過充電檢測延時時間(jian) 1ms~（1ms x 2n1）+（1ms x 2n2）+（1ms x 2n3）可選 精度±25%

● 過充電解除延時時間 1ms~（1ms×2n1）可選(xuan) 精度±25%

● VOUT OFF延(yan)時時間 1ms~（1ms x 2n1）+（1ms x 2n2）+（1ms x 2n3）可選 精度±25%

 n1、n2和n3可從0~17個任意整數(shu)中進(jin)行(xing)選擇。 （但(dan)n1≠n2≠n3）

（3）調節器(qi)輸(shu)出(chu)電壓的選擇范圍與精度

● VOUT引腳輸出電壓1.8 V ~ 5.0 V，50 mV 進階(jie)可選 精度±100 mV

（4） SEL引腳可在3串(chuan)、4串(chuan)電池保護(hu)之(zhi)間進(jin)行切換

（5） 穩壓器的(de)輸出(chu)可以(yi)用EN引(yin)腳控制(zhi)

（6） FUSE端子可(ke)以用CTL引腳(jiao)控制

（7） 低電流消耗

● 消耗電流1（VDD引腳(jiao)）Vcell=3.5V Typ. 4.5μA Max. 6.5μA

● 消耗電流2（VDD引(yin)(yin)腳）Vcell=2.5V Max. 0.1μA（當(dang)VOUT的啟動條件(jian)為EN引(yin)(yin)腳時）

                               Max. 1.0μA（當VOUT的(de)啟動條(tiao)件為電池電壓時(shi)）