MM3563系(xi)列是采(cai)用(yong)高耐(nai)壓CMOS制造工(gong)藝的(de)(de)可充電(dian)(dian)(dian)(dian)鋰(li)離(li)子/鋰(li)聚(ju)(ju)合物電(dian)(dian)(dian)(dian)池(chi)IC，能夠對1-3串(chuan)(chuan)鋰(li)離(li)子/鋰(li)聚(ju)(ju)合物電(dian)(dian)(dian)(dian)池(chi)的(de)(de)每(mei)串(chuan)(chuan)電(dian)(dian)(dian)(dian)池(chi)進行高精度的(de)(de)過(guo)充電(dian)(dian)(dian)(dian)檢測。 內部由電(dian)(dian)(dian)(dian)壓檢測器(qi)、基(ji)準電(dian)(dian)(dian)(dian)壓源、振蕩器(qi)電(dian)(dian)(dian)(dian)路、計數(shu)器(qi)電(dian)(dian)(dian)(dian)路和邏輯電(dian)(dian)(dian)(dian)路構成。 采(cai)用(yong)超小體積(ji)(ji)封裝（SSON-6A），以節(jie)省安裝面(mian)積(ji)(ji)。

1 ~ 3串 二次保護(hu)用

（1）過充電(dian)(dian)檢測電(dian)(dian)壓(ya)/滯后電(dian)(dian)壓(ya)的選擇范圍與精度。

　● 過充電檢測(ce)電壓 4.0 V ~ 4.5 V，5 mV 進階可選 精度±25 mV

　● 過充電滯(zhi)后電壓(ya) 檢測(ce)電壓(ya)-500mV ~ -50mV 精度±50mV ~ 100mV

（2）過充(chong)電檢測延時(shi)時(shi)間的選擇范(fan)圍(wei)

　● 1ms ~ （1ms×2n1）+（1ms×2n2）可選

   * N1、n2可從(cong)0~13之間的任何兩個整數中(zhong)進行選擇。 （但n1≠n2）

（3）低電流消耗

　● Typ. 1.5 μA, Max. 3.0 μA （Vcell=4.0 V）

　● Typ. 0.15 μA, Max. 0.30 μA （Vcell=2.3V）